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| HMC636ST89 / 636ST89E v00.1207 GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz Typical Applications The HMC636ST89(E) is ideal for: * Cellular / PCS / 3G * WiMAX, WiBro, & Fixed Wireless * CATV & Cable Modem * Microwave Radio Features Low Noise Figure: 2.2 dB High P1dB Output Power: +22 dBm High Output IP3: +40 dBm Gain: 13 dB 50 Ohm I/O's - No External Matching Industry Standard SOT89 Package Functional Diagram General Description The HMC636ST89(E) is a GaAs PHEMT, High Linearity, Low Noise, Wideband Gain Block Amplifier covering 0.2 to 4.0 GHz. Packaged in an industry standard SOT89, the amplifier can be used as either a cascadable 50 Ohm gain stage, a PA Pre-Driver, a Low Noise Amplifier, or a Gain Block with up to +23 dBm output power. This versatile Gain Block Amplifier is powered from a single +5V supply and requires no external matching components The internally matched topology makes this amplifier compatible with virtually any PCB material or thickness. 6 LINEAR & POWER AMPLIFIERS - SMT Electrical Specifi cations, Vs= 5.0 V, TA = +25 C Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) 19 36 10 Min Typ. 0.2 - 2.0 13 0.01 10 13 22 22 39 2.5 155 20 36 0.02 5 Max Min. Typ. 2.0 - 4.0 10 0.01 10 15 20 23 39 2 155 0.02 Max. Units GHz dB dB/ C dB dB dBm dB dBm dB mA Note: Data taken with broadband bias tee on device output. 6 - 326 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC636ST89 / 636ST89E v00.1107 GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz Broadband Gain & Return Loss 20 15 RESPONSE (dB) 10 S21 S11 S22 Gain vs. Temperature 16 14 12 GAIN (dB) 10 8 6 4 2 0 +25C +85C -40C 5 0 -5 -10 -15 -20 0 1 2 3 4 5 6 0 1 2 FREQUENCY (GHz) 3 4 FREQUENCY (GHz) 6 +25C +85C -40C 0 0 RETURN LOSS (dB) -10 RETURN LOSS (dB) -5 -5 -10 -15 +25C +85C -40C -15 -20 0 1 2 FREQUENCY (GHz) 3 4 -20 0 1 2 FREQUENCY (GHz) 3 4 Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) +25C +85C -40C Noise Figure vs. Temperature 10 9 -5 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 +25C +85C -40C -10 -15 -20 -25 0 1 2 FREQUENCY (GHz) 3 4 0 0 1 2 FREQUENCY (GHz) 3 4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 6 - 327 LINEAR & POWER AMPLIFIERS - SMT Input Return Loss vs. Temperature Output Return Loss vs. Temperature HMC636ST89 / 636ST89E v00.1107 GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz P1dB vs. Temperature 30 25 20 15 10 5 0 Psat vs. Temperature 30 25 20 15 10 5 0 +25C +85C -40C P1dB (dBm) +25C +85C -40C 6 LINEAR & POWER AMPLIFIERS - SMT 28 Pout (dBm), GAIN (dB), PAE (%) 24 20 16 12 8 4 0 -4 0 1 2 FREQUENCY (GHz) 3 4 Psat (dBm) 0 1 2 FREQUENCY (GHz) 3 4 Power Compression @ 850 MHz Power Compression @ 2200 MHz 32 Pout (dBm), GAIN (dB), PAE (%) 28 24 20 16 12 8 4 0 -4 16 -8 -20 -16 -12 -8 -4 0 4 8 12 16 Pout Gain PAE Pout Gain PAE -8 -20 -16 -12 -8 -4 0 4 8 12 INPUT POWER (dBm) INPUT POWER (dBm) Output IP3 vs. Input Tone Power 45 Gain, Power, OIP3 & Supply Current vs. Supply Voltage @ 850 MHz GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 50 Is 160 140 120 100 Gain P1dB Psat OIP3 40 OIP3 (dBm) 40 35 Is (mA) 30 0 dBm + 5 dBm +10 dBm 30 80 60 25 20 40 20 20 0 1 2 FREQUENCY (GHz) 3 4 10 4.5 4.75 5 Vs (Vdc) 5.25 0 5.5 6 - 328 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC636ST89 / 636ST89E v00.1107 GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) RF Input Power (RFIN)(Vcc = +5 Vdc) Channel Temperature Continuous Pdiss (T = 85 C) (derate 13.3 mW/C above 85 C) Thermal Resistance (Channel to lead) Storage Temperature Operating Temperature +5.5 Volts +16 dBm 150 C 0.86 W 75.6 C/W -65 to +150 C -40 to +85 C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing 6 LINEAR & POWER AMPLIFIERS - SMT 6 - 329 NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number HMC636ST89 HMC636ST89E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H636 XXXX H636 XXXX [2] [1] Max peak reflow temperature of 235 C [2] Max peak reflow temperature of 260 C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC636ST89 / 636ST89E v00.1107 GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz Pin Descriptions Pin Number Function Description Interface Schematic 1 RFIN This pin is DC coupled. An off-chip DC blocking capacitor is required. 3 RFOUT RF Output and DC BIAS for the amplifier. See Application Circuit for off-chip components. 6 LINEAR & POWER AMPLIFIERS - SMT 2, 4 GND These pins and package bottom must be connected to RF/DC ground. Application Circuit 6 - 330 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC636ST89 / 636ST89E v00.1107 GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz Evaluation PCB 6 LINEAR & POWER AMPLIFIERS - SMT 6 - 331 List of Materials for Evaluation PCB 119394 [1] Item J1 - J2 J3 - J4 C1 - C3 C4 C5 L1 U1 PCB [2] Description PCB Mount SMA Connector DC Pin 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 2.2 F Capacitor, Tantalum 47 nH Inductor, 0603 Pkg. HMC636ST89(E) 119392 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com |
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